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LS4448 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 LS4448
功能描述  Hermetically Sealed Glass Fast Switching Diodes
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

LS4448 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  LS4448_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH LS4448_15 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
LS4448
500 mW
Hermetically Sealed Glass Fast Switching Diodes
05-Aug-2013 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast Switching Device (TRR < 4.0nS)
QUADRO Mini-MELF Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And
Terminals Are Readily Solderable
Matte Tin (Sn) Lead Finish
Color band Indicates Negative Polarity
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Power Dissipation
PD
500
mW
Operating Junction and
Storage Temperature Range
TJ, TSTG
150, -65~150
°C
Working Inverse Voltage
WIV
75
V
Average Rectified Current
IO
150
mA
Non-repetitive Peak Forward Current
IFM
450
mA
Peak Forward Surge Current
IFSURGE
2
A
Notes:
1.
These ratings are limiting values above which the serviceability of the diode may be impaired.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Limits
Parameter
Symbol
Min
Max
Unit
Test Condition
100
-
IR=100μA
Breakdown Voltage
BV
75
-
V
IR=5μA
-
25
nA
VR=20V
Reverse Leakage Current
IR
-
5
μA
VR=75V
0.62
0.72
IF=5mA
Forward Voltage
VF
-
1.0
V
IF=100mA
-
-
Reverse Recovery Time
TRR
-
4
nS
IF=IR=10mA
RL=100Ω
IRR=1mA
Capacitance
C
-
4
pF
VR=0, f=1MHz
QUADRO (Mini-MELF)
Millimeter
REF.
Min.
Max.
A
3.30
3.70
B
1.40
1.60
C
0.35
0.45
D
1.8 Typ.
D
A
C
C
B
Cathode
Anode


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