RF3V49092 datasheet(2/13 Pages) INTERSIL

部件名	RF3V49092

功能描述	20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET

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制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

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2 / 13 page

4-31

Absolute Maximum Ratings

TC = 25

oC Unless Otherwise Speciﬁed

N-CHANNEL

P-CHANNEL

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . VDSS

12

-12

V

Drain to Gate Voltage (RGS = 20kΩ, Note 1) . . . . . . . . .VDGR

12

-12

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

V

Drain Current

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . IDM

20

Refer to Peak Current Curve

10

Refer to Peak Current Curve

A

Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50

0.33

50

0.33

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . .Tpkg

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations (N-Channel) TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V, (Figure 13)

12

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA, (Figure 12)

1

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 12V,

VGS = 0V

TC = 25

oC-

-

1

µA

TC = 150

oC-

-

50

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

-

±100

nA

Drain to Source On Resistance

rDS(ON)

ID = 20A, VGS = 5V, (Figure 9, 11)

-

0.060

Ω

Turn-On Time

tON

VDD = 6V, ID ≈ 20A, RL = 0.24Ω,

VGS = 5V, RGS = 25Ω

(Figure 10)

-

100

ns

Turn-On Delay Time

td(ON)

-18-

ns

Rise Time

tr

-60-

ns

Turn-Off Delay Time

td(OFF)

-50-

ns

Fall Time

tf

-60-

ns

Turn-Off Time

tOFF

-

140

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 9.6V,

ID = 20A,

RL = 0.42Ω

(Figure 15)

-20

25

nC

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

-

12

15

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

-

0.9

1.2

nC

Input Capacitance

CISS

VDS = 10V, VGS = 0V, f = 1MHz

(Figure 14)

-

750

-

pF

Output Capacitance

COSS

-

700

-

pF

Reverse Transfer Capacitance

CRSS

-

275

-

pF

Thermal Resistance Junction to Case

R

θJC

-

3.00

oC/W

Thermal Resistance Junction to Ambient

R

θJA

TS-001AA, and MO-169AB

-

62

oC/W

N-Channel Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Voltage

VSD

ISD = 20A

-

1.5

V

Reverse Recovery Time

trr

ISD = 20A, dISD/dt = 100A/µs

-

100

ns

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