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BCP5551 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP5551 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente 1.BASE 2.COLLECTOR 3.EMITTER ABSOLUTE MAXIMUM RATINGS (Tamb=25 C, unless otherwise specified) o P Symbol Value Unit arameter Collector-Base Voltage VCBO 180 V V V mA W C o Collector-Emitter Voltage VCEO VEBO 6 Emitter-Base Voltage 600 PD IC 1.2 Collector Current Total Power Dissipation Operating Junction and Storage Temperature TJ,TSTG -55 ~ +150 160 P Symbol Min. Typ. Max. Unit Test Conditions arameter Collector-Base Breakdown Voltage IC= 100µA IC= 1mA IE= 10µA VCB= 120V VEB= 4V IC= 10mA, IB= 1mA IC VCB= 10V, f=1MHz BVCBO 180 V Collector-Emitter Breakdown Voltage BVCEO BVEBO V V 6 nA Emitter-Base Breakdown Voltage nA ICBO IEBO V 1 CE(sat) - - - - - - - - - - - - - - - - - 200 150 50 50 mV mV Collector Cut-off Current Emitter Cut-off Current Output Capacitance 160 IC= 50mA, IB= 5mA VCE= 5V, IC= 1mA VCE= 5V, IC= 10mA VCE= 5V, IC= 50mA VCE= 10V,IC= 10mA, f=100MHz 80 80 VBE(sat)2 hFE1 hFE2 hFE3 fT - - - - - 300 - - 30 250 1 MHz V Base-Emitter Voltage DC Current Gain Transition Frequency V 2 CE(sat) Collector-Emitter Saturation Voltage = 50mA, IB = 5mA Cob VBE(sat)1 - 6 pF - 100 1 V IC= 10mA, IB= 1mA Marking: XXXX RoHS Compliant Product 5551 (xxxx = Date Code) ELECTRICAL CHARACTERISTICS (Tamb=25 C) o Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 Features SOT-89 REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 1 of 2 |
类似零件编号 - BCP5551_15 |
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类似说明 - BCP5551_15 |
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