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FDG6301N 数据表(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 FDG6301N
功能描述  Dual N-Channel MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

FDG6301N 数据表(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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4
MOSFET
.
Dual N-Channel MOSFET
FDG6301N (KDG6301N)
Typical Characterisitics
Figure 10 . Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
6
Q , GATE CHARGE (nC)
g
I = 0.22A
D
V
= 5V
DS
10V
0.4
0.8
2
5
10
25
40
0.01
0.03
0.1
0.3
1
V
, DRAIN-SOURCE VOLTAGE (V)
RD
S(O
N)
LIM
IT
DC
DS
10s
100m
s
10ms
V
= 4.5V
SINGLE PULSE
R
= 415 °C/W
T = 25°C
θJA
GS
A
1s
0.1
0.3
1
3
10
25
2
3
5
8
15
30
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0.0001
0.001
0.01
0.1
1
10
200
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
=415°C/W
T = 25°C
θJA
A
0.0001
0.001
0.01
0.1
1
10
100
200
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
T - T = P * R
(t)
A
J
P(pk)
t1
t 2
θJA
R
(t) = r(t) * R
R
=415
°C/W
θJA
θJA
θJA
Figure 11 . Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.


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