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SI2337DS-HF-3 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2337DS-HF-3 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 6 page SMD Type www.kexin.com.cn 1 MOSFET ■ Features ● VDS (V) =-80V ● ID =-2.2A (VGS =-10V) ● RDS(ON) < 270mΩ (VGS =-10V) ● RDS(ON) < 303mΩ (VGS =-6V) G S D 2 3 1 S G D ■ Absolute Maximum Ratings Ta = 25℃ Symbol 5 sec Steady State Unit VDS VGS Ta = 25℃ -2.2 -1.2 Ta = 70℃ -1.75 -0.96 IDM Avalanche Current IAS Single-Pulse Avalanche Energy EAS mJ Ta = 25℃ 2.5 1.6 Ta = 70℃ 0.76 0.48 Thermal Resistance.Junction- to-Ambient t≤10 sec RthJA Thermal Resistance.Junction- to-Foot steady State RthJF Junction Temperature TJ Storage Temperature Range Tstg -55 to 150 150 260 V ℃ /W ℃ -80 ± 20 -7 11 6 166 50 Parameter ID Continuous Drain Current Pulsed Drain Current A W Power Dissipation PD Gate-Source Voltage Drain-Source Voltage Soldering Recommendations (Peak Temperature) L=0.1mH ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish P-Channel MOSFET SI2337DS-HF (KI2337DS-HF) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 1 2 3 Unit: mm SOT-23-3 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain |
类似零件编号 - SI2337DS-HF-3 |
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类似说明 - SI2337DS-HF-3 |
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