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2SK1521-E1-E 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SK1521-E1-E 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK1521-E1-E Preliminary R07DS1194EJ0300 Rev.3.00 Page 3 of 6 Mar 26, 2014 Main Characteristics 1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) 0.1 0.01 10 100 1000 VGS = 10 V Ta = 25 °C Pulse Test 1000 1000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 1 100 10 1 0.1 10 100 100 820 Drain to Source Voltage VDS (V) Typical Output Characteristics 80 20 0 412 16 0 40 60 VGS = 4 V 8 V 10 V 6 V 5.5 V 5 V 4.5 V 100 410 Gate to Source Voltage VGS (V) Typical Transfer Characteristics 80 20 0 26 8 0 40 60 VDS = 20 V Pulse Test Ta = 75 °C –25 °C 25 °C Tc = 25 °C 1 shot Operation in this area is limited by RDS(on) 10 μs PW = 100 μs Ta = 25 °C Pulse Test Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) −25 0 50 25 75 100 125 150 VGS = 10 V Pulse Test 0.5 0.4 0.1 0 0.2 0.3 ID = 50 A 10 A, 20 A 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di/dt = 100 A/ μs VGS = 0, Ta = 25°C |
类似零件编号 - 2SK1521-E1-E_15 |
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类似说明 - 2SK1521-E1-E_15 |
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