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SI2319DS 数据表(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2319DS 数据表(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 5 page SMD Type www.kexin.com.cn 3 MOSFET P-Channel Enhancement MOSFET SI2319DS (KI2319DS) ■ Typical Characterisitics 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 2 4 6 8 10 12 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 0.00 0.04 0.08 0.12 0.16 0.20 0 2 4 6 8 10 12 0 4 8 12 16 20 0 2 4 6 8 10 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 On-Resistancevs. Drain Current s c it s ir e t c a r a h C r e f s n a r T s c it s ir e t c a r a h C t u p t u O VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) T C = 125 C −55 C V GS = 10 thru 5 V 1 V, 2 V 3 V Gate Charge Q − Total Gate Charge (nC) V DS Drain-to-Source Voltage (V) C rss C oss C iss V DS = 20 V ID = 3 A ID Drain Current (A) Capacitance On-Resistance vs. Junction Temperature V GS = 10 V ID = 3 A TJ − Junction Temperature ( C) V GS = 10 V V GS = 4.5 V 25 C 4 V - - |
类似零件编号 - SI2319DS |
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类似说明 - SI2319DS |
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