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SI2319DS 数据表(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 SI2319DS
功能描述  P-Channel Enhancement MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2319DS 数据表(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2319DS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
P-Channel Enhancement MOSFET
SI2319DS (KI2319DS)
Typical Characterisitics
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
2
4
6
8
10
12
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
30
35
40
0.00
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
12
0
4
8
12
16
20
0
2
4
6
8
10
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
On-Resistancevs. Drain Current
s
c
it
s
ir
e
t
c
a
r
a
h
C
r
e
f
s
n
a
r
T
s
c
it
s
ir
e
t
c
a
r
a
h
C
t
u
p
t
u
O
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
T C = 125 C
−55 C
V GS = 10 thru 5 V
1 V, 2 V
3 V
Gate Charge
Q − Total Gate Charge (nC)
V DS
Drain-to-Source Voltage (V)
C rss
C oss
C iss
V DS = 20 V
ID = 3 A
ID
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V GS = 10 V
ID = 3 A
TJ − Junction Temperature ( C)
V GS = 10 V
V GS = 4.5 V
25 C
4 V
-
-


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