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SI2319DS 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 SI2319DS
功能描述  P-Channel Enhancement MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2319DS 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2319DS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd SI2319DS Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
2
MOSFET
P-Channel Enhancement MOSFET
SI2319DS (KI2319DS)
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-250μA, VGS=0V
-40
V
VDS=-40V, VGS=0V
-1
VDS=-40V, VGS=0V, TJ=55℃
-10
Gate-Body leakage current
IGSS
VDS=0V, VGS=±20V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
-1
-3
V
VGS=-10V, ID=-3.0A
65
82
VGS=-4.5V, ID=-2.4A
100
130
On state drain current *1
ID(ON)
VGS=-10V, VDS=-5V
-6
A
Forward Transconductance *1
gFS
VDS=-5V, ID=-3.0A
7
S
Input Capacitance
Ciss
470
Output Capacitance
Coss
85
Reverse Transfer Capacitance
Crss
65
Total Gate Charge
Qg
11.3
17
Gate Source Charge
Qgs
1.7
Gate Drain Charge
Qgd
3.3
Turn-On DelayTime
td(on)
7
15
Turn-On Rise Time
tr
15
25
Turn-Off DelayTime
td(off)
25
40
Turn-Off Fall Time
tf
25
40
Maximum Body-Diode Continuous Current
IS
-1.25
A
Diode Forward Voltage
VSD
IS=-1.25 A,VGS=0V
-0.8
-1.2
V
pF
nC
VGS=-4.5V, VDS=-20V, RL=20Ω,RGEN=6Ω
ID=-1.0A
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
RDS(On)
Static Drain-Source On-Resistance *1
VGS=0V, VDS=-20V, f=1MHz
VGS=-10V, VDS=-20V, ID=-3A
*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.
Marking
Marking
C9*


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