SI2315BDS-3 datasheet(3/5 Pages) KEXIN

部件名	SI2315BDS-3

功能描述	P-Channel Enhancement MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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MOSFET

P-Channel Enhancement MOSFET

SI2315BDS (KI2315BDS)

■

Typical Characterisitics

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

12

0

1

2

3

4

5

6

V GS = 4.5 thru 2 V

1.5 V

V DS

- Drain-to-Source Voltage (V)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0

2

4

6

8

10

12

V GS = 4.5 V

V GS = 2.5 V

ID - Drain Current (A)

V GS = 1.8 V

0

1

2

3

4

5

0

2

4

6

8

10

V DS = 6 V

ID = 3.5 A

Q g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

12

0.0

0.5

1.0

1.5

2.0

2.5

25 °C

T C = 125 °C

- 55 °C

V GS

- Gate-to-Source Voltage (V)

0

200

400

600

800

1000

1200

0

2

4

6

8

10

12

C rss

C oss

C iss

V DS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

V GS = 4.5 V

ID = 3.5 A

T J - Junction Temperature (°C)

类似零件编号 - SI2315BDS-3

制造商	部件名	数据表	功能描述
Guangdong Kexin Industr...	SI2315BDS-HF	1Mb / 5P	P-Channel MOSFET
Guangdong Kexin Industr...	SI2315BDS-HF-3	1Mb / 5P	P-Channel MOSFET
Vishay Siliconix	SI2315BDS-T1	214Kb / 9P	P-Channel 1.8-V (G-S) MOSFET Rev. E, 24-Mar-08
VBsemi Electronics Co.,...	SI2315BDS-T1-GE3	496Kb / 9P	P-Channel 30 V (D-S) MOSFET

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