2SD1005_15 datasheet(1/1 Pages) SECOS

部件名	2SD1005

功能描述	NPN Plastic Encapsulated Elektronische Bauelemente Transistor

Download	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

2SD1005

1A , 100V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

10-Nov-2011 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

3

Emitter

Collector

2

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Small Flat Package

High Breakdown Voltage

Excellent DC Current Gain Linearity

CLASSIFICATION OF hFE(1)

Product-Rank

2SD1005-W

2SD1005-V

2SD1005-U

Range

90~180

135~270

200~400

Marking

BW

BV

BU

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-89

1K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5

V

Collector Current-Continuous

IC

1

A

Collector Power Dissipation

PC

500

mW

Maximum Junction to Ambient

RθJA

250

°C / W

Junction & Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-Base Breakdown Voltage

V(BR)CBO

100

-

V

IC=0.1mA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

80

-

V

IC=1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=0.1mA, IC=0

Collector Cut-Off Current

ICBO

-

0.1

µA

VCB=100V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

µA

VEB=5V, IC=0

DC Current Gain

hFE*

90

-

400

VCE=2V, IC=100mA

25

-

VCE=2V, IC=500mA

Collector-Emitter Saturation voltage

VCE(sat)*

-

0.5

V

IC=500mA, IB=50mA

Base-emitter saturation voltage

VBE(sat)*

-

1.5

V

IC=500mA, IB=50mA

Base-emitter voltage

VBE*

0.6

-

0.7

V

VCE=10V,IC=10mA

Transition Frequency

fT

-

160

-

MHz

VCE=5V,IC=10mA

Collector Output Capacitance

COB

-

12

-

pF

VCB=10V, IE=0, f=1MHz

*Pulse test

SOT-89

A

E

C

D

B

K

H

F

G

L

J

1

2

3

4

B C

E

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

4.40

4.60

G

0.40

0.58

B

3.94

4.25

H

1.50

TYP

C

1.40

1.60

J

3.00

TYP

D

2.25

2.60

K

0.32

0.52

E

1.50

1.85

L

0.35

0.44

F

0.89

1.20

类似零件编号 - 2SD1005_15

制造商	部件名	数据表	功能描述
Guangdong Kexin Industr...	2SD1005	1Mb / 3P	NPN Transistors

More results

类似说明 - 2SD1005_15

制造商	部件名	数据表	功能描述
SeCoS Halbleitertechnol...	3DD13003B	523Kb / 2P	NPN Plastic-Encapsulated Elektronische Bauelemente Transistor
	KTC1027	57Kb / 1P	NPN Plastic Encapsulated Elektronische Bauelemente Transistor
	2SD1271A	595Kb / 2P	NPN Plastic-Encapsulated Elektronische Bauelemente Transistor
	2SC2383	77Kb / 1P	NPN Plastic Encapsulated Elektronische Bauelemente Transistor
	BCPA1666	78Kb / 1P	PNP Plastic Encapsulated Elektronische Bauelemente Transistor
	MPSA55	66Kb / 1P	PNP Plastic Encapsulated Elektronische Bauelemente Transistor
	BC212	72Kb / 1P	PNP Plastic Encapsulated Elektronische Bauelemente Transistor
	M28ST	59Kb / 1P	1A , 40V NPN Plastic Encapsulated Elektronische Bauelemente Transistor
	SCS221T	153Kb / 2P	Plastic-Encapsulated Elektronische Bauelemente Switching Diode
	BC556	314Kb / 3P	Elektronische Bauelemente