4-27

File Number

2224.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRF9630, RF1S9630SM

6.5A, 200V, 0.800 Ohm, P-Channel Power

MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and drivers for other

high-power switching devices. The high input impedance

allows these types to be operated directly from integrated

circuits.

Formerly developmental type TA17512.

Features

• 6.5A, 200V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9630

TO-220AB

IRF9630

RF1S9630SM

TO-263AB

RF1S9630

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.

G

D

S

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet

July 1999