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IRF9630 数据表(PDF) 1 Page - Intersil Corporation |
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IRF9630 数据表(HTML) 1 Page - Intersil Corporation |
1 / 7 page 4-27 File Number 2224.3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9630, RF1S9630SM 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17512. Features • 6.5A, 200V •rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB Ordering Information PART NUMBER PACKAGE BRAND IRF9630 TO-220AB IRF9630 RF1S9630SM TO-263AB RF1S9630 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A. G D S GATE DRAIN (FLANGE) SOURCE DRAIN DRAIN (FLANGE) GATE SOURCE Data Sheet July 1999 |
类似零件编号 - IRF9630 |
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类似说明 - IRF9630 |
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