FDN352AP-HF-3 datasheet(4/4 Pages) KEXIN

部件名	FDN352AP-HF-3

功能描述	P-Channel MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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4

MOSFET

.

■

Typical Characterisitics

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

0

2

4

6

8

10

0

0.5

1

1.5

2

2.5

3

Qg, GATE CHARGE (nC)

I

D = -0.9A

V

DS

= -10V

-20V

-15V

0

50

100

150

200

0

5

10

15

20

25

30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

iss

C

oss

C

rss

f = 1 MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0

1

0

1

.

0

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

R

DS(ON)

LIMIT

V

GS

= -10V

SINGLE PULSE

R JA = 270

oC/W

TA = 25oC

10ms

1ms

100 µs

0

10

20

30

40

50

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

R JA = 270°C/W

TA = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

θ

Figure 11. Transient Thermal Response Curve.

RθJA(t) = r(t) * RθJA

RθJA = 270°C/W

TJ – TA = P * RθJA(t)

Duty Cycle, D = t 1 / t2

P(pk)

t

1

t2

P-Channel MOSFET

FDN352AP-HF (KDN352AP-HF)

类似零件编号 - FDN352AP-HF-3

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Guangdong Kexin Industr...	FDN352AP-HF	1Mb / 4P	P-Channel MOSFET

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