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IRF540N 数据表(PDF) 2 Page - Intersil Corporation |
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IRF540N 数据表(HTML) 2 Page - Intersil Corporation |
2 / 10 page 2 Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 100 - - V Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 33A, VGS = 10V (Figure 9) - 0.033 0.040 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 - - 1.25 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 50V, ID = 33A VGS = 10V, RGS = 9.1Ω (Figures 18, 19) - - 100 ns Turn-On Delay Time td(ON) - 9.5 - ns Rise Time tr -57- ns Turn-Off Delay Time td(OFF) -40- ns Fall Time tf -55- ns Turn-Off Time tOFF - - 145 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V, ID = 33A, Ig(REF) = 1.0mA (Figures 13, 16, 17) -66 79 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 35 42 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 2.4 2.9 nC Gate to Source Gate Charge Qgs - 5.4 - nC Gate to Drain "Miller" Charge Qgd -13- nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 1220 - pF Output Capacitance COSS - 295 - pF Reverse Transfer Capacitance CRSS - 100 - pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 33A - - 1.25 V ISD = 17A - - 1.00 V Reverse Recovery Time trr ISD = 33A, dISD/dt = 100A/µs - - 112 ns Reverse Recovered Charge QRR ISD = 33A, dISD/dt = 100A/µs - - 400 nC IRF540N |
类似零件编号 - IRF540N |
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类似说明 - IRF540N |
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