2SA1121SCTL-E datasheet(2/6 Pages) RENESAS

部件名	2SA1121SCTL-E

功能描述	Silicon PNP Epitaxial

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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2 / 6 page

2SA1121

Preliminary

R07DS0271EJ0400 Rev.4.00

Page 2 of 5

Jan 10, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

–35

—

V

IC = –10

μA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

–35

—

V

IC = –1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

–4

—

V

IE = –10

μA, IC = 0

Collector cutoff current

ICBO

—

–0.5

μA

VCB = –20 V, IE = 0

Collector to emitter saturation voltage

VCE(sat)

—

–0.2

–0.6

V

IC = –150 mA, IB = –15 mA

DC current transfer ratio

hFE*

1

100

—

320

VCE = –3 V, IC = –10 mA

hFE

10

—

VCE = –3 V, IC = –500 mA

(Pulse test)

Base to emitter voltage

VBE

—

–0.64

—

V

VCE = –3 V, IC = –10 mA

Note:

1. The 2SA1121 is grouped by hFE as follows.

Grade

C

D

Mark

SC

SD

hFE

100 to 200

160 to 320

类似零件编号 - 2SA1121SCTL-E

制造商	部件名	数据表	功能描述
Renesas Technology Corp	2SA1121SCTL-E	65Kb / 5P	Silicon PNP Epitaxial
Renesas Technology Corp	2SA1121SCTL-E	92Kb / 6P	Silicon PNP Epitaxial

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