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IRF245 数据表(PDF) 3 Page - Intersil Corporation |
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IRF245 数据表(HTML) 3 Page - Intersil Corporation |
3 / 7 page 5-3 IRF244, IRF245, IRF246, IRF247 Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 - pF Output Capacitance COSS - 320 - pF Reverse-Transfer Capacitance CRSS -69- pF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 5.0 - nH Internal Source Inductance LS Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad - 12.5 - nH Junction to Case RθJC - - 1.0 oC/W Junction to Ambient RθJA Free Air Operation - - 30 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode - - 14 A Pulse Source to Drain Current (Note 3) ISM - - 56 A Source to Drain Diode Voltage (Note 2) VSD TJ = 25 oC, I SD = 14A, VGS = 0V (Figure 13) - - 1.8 V Reverse Recovery Time trr TJ = 25 oC, I SD = 14A, dISD/dt = 100A/µs 150 300 640 ns Reverse Recovered Charge QRR TJ = 25 oC, I SD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC Forward Turn-On Time tON Intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled by LS + LD -- - - NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25 oC, L = 4.5mH, R G = 25Ω, peak IAS = 14A. See Figures 15, 16. Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LS LD G D S G D S |
类似零件编号 - IRF245 |
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类似说明 - IRF245 |
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