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HUF76145P3 Datasheet(数据表) 1 Page - Intersil Corporation |
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HUF76145P3 Datasheet(HTML) 1 Page - Intersil Corporation |
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1 page 
6-178 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET™ is a Trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HUF76145P3, HUF76145S3S 75A, 30V, 0.0045 Ohm , N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76145. Features • Logic Level Gate Drive • 75A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.0045Ω • Temperature Compensating PSPICE™ Model • Temperature Compensating SABER Model • Thermal Impedance SPICE Model • Thermal Impedance SABER Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB Ordering Information PART NUMBER PACKAGE BRAND HUF76145P3 TO-220AB 76145P HUF76145S3S TO-263AB 76145S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST. D G S DRAIN SOURCE GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) September 1999 Data Sheet File Number 4401.7 |
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