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HUF76139P3 Datasheet(数据表) 3 Page - Intersil Corporation |
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HUF76139P3 Datasheet(HTML) 3 Page - Intersil Corporation |
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3 page 
6-156 SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 15V, ID ≅ 75A RL = 0.200Ω, VGS = 10V, RGS = 10Ω (Figures 16, 21, 22) - - 120 ns Turn-On Delay Time td(ON) -16- ns Rise Time tr -65- ns Turn-Off Delay Time td(OFF) -90- ns Fall Time tf -55- ns Turn-Off Time tOFF - - 218 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 64A, RL = 0.234Ω Ig(REF) = 1.0mA (Figures 14, 19, 20) -65 78 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 38 46 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 2.5 3 nC Gate to Source Gate Charge Qgs - 7.60 - nC Gate to Drain “Miller”Charge Qgd - 18.40 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 2700 - pF Output Capacitance COSS - 1100 - pF Reverse Transfer Capacitance CRSS - 200 - pF Electrical Specifications TA = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 75A - - 1.25 V Reverse Recovery Time trr ISD = 75A, dISD/dt = 100A/µs- - 85 ns Reverse Recovered Charge QRR ISD = 75A, dISD/dt = 100A/µs - - 160 nC Typical Performance Curves FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TA, AMBIENT TEMPERATURE ( oC) 0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 0 20 40 60 80 25 50 75 100 125 150 VGS = 10V VGS = 4.5V TC, CASE TEMPERATURE ( oC) HUF76139P3, HUF76139S3S |
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