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HUF76129P3 Datasheet(数据表) 2 Page - Intersil Corporation |
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HUF76129P3 Datasheet(HTML) 2 Page - Intersil Corporation |
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2 page 
2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±16 V Drain Current Continuous (TC = 25 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100 oC, V GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 56 35 34 Figure 4 A A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Figures 6, 17, 18 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 0.83 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 150oC. Electrical Specifications TA = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 30 - - V Zero Gate Voltage Drain Current IDSS VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 56A, VGS = 10V (Figure 9, 10) - 0.014 0.016 Ω ID = 35A, VGS = 5V (Figure 9) - 0.0175 0.021 Ω ID = 34A, VGS = 4.5V - 0.0195 0.023 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 1.20 oC/W Thermal Resistance Junction to Ambient RθJA TO-220 and TO-263 - - 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 15V, ID ≅ 34A, RL = 0.441Ω, VGS = 4.5V, RGS = 6.8Ω (Figures 15, 21, 22) - - 160 ns Turn-On Delay Time td(ON) -14- ns Rise Time tr -90- ns Turn-Off Delay Time td(OFF) -28- ns Fall Time tf -32- ns Turn-Off Time tOFF - - 90 ns HUF76129P3, HUF76129S3S |
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