HUF76129P3 Datasheet(数据表) 1 Page

1 page

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

SABER

HUF76129P3, HUF76129S3S

56A, 30V, 0.016 Ohm, N-Channel, Logic

Level UltraFET Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

This advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efﬁciency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA76129.

Features

• Logic Level Gate Drive

• 56A, 30V

•

Ultra Low On-Resistance, rDS(ON) = 0.016Ω

• Temperature Compensating PSPICE® Model

• Temperature Compensating SABER© Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76129P3

TO-220AB

76129P

HUF76129S3S

TO-263AB

76129S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF76129S3ST.

JEDEC TO-220AB

JEDEC TO-263AB

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet

September 1999

File Number

4395.6

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