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HUF76129D3 Datasheet(数据表) 8 Page - Intersil Corporation

部件型号  HUF76129D3
说明  20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

HUF76129D3 Datasheet(HTML) 8 Page - Intersil Corporation

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PSPICE Electrical Model
SUBCKT HUF76129D 2 1 3 ;
REV April 1998
CA 12 8 1.95e-9
CB 15 14 1.85e-9
CIN 6 8 1.31e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 32
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.20e-9
LSOURCE 3 7 3.03e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.9e-3
RGATE 9 20 3.6e-1
RLDRAIN 2 5 10
RLGATE 1 9 22
RLSOURCE 3 7 30.3
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 10e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*1000),3.5))}
.MODEL DBODYMOD D (IS = 1.2e-12 IKF = 8 TIKF = 1e-2 RS = 7.7e-3 TRS1 = 3e-4 TRS2 = 1e-6 CJO = 2.23e-9 TT = 35e-9 M = 4e-1 XTI =4.75 )
.MODEL DBREAKMOD D (RS = 9.5e-2 TRS1 = 4e-3 TRS2 = 3e-5 IKF = 1e-1)
.MODEL DPLCAPMOD D (CJO = 1.12e-10 IS = 1e-30 N = 10 M = 6.5e-1 VJ = 1.45)
.MODEL MMEDMOD NMOS (VTO = 1.87 KP = 5.75 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1)
.MODEL MSTROMOD NMOS (VTO = 2.15 KP = 90 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.49 KP =2e-2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 10)
.MODEL RBREAKMOD RES (TC1 = 9.8e-4 TC2 = -1e-10)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 1e-5)
.MODEL RSLCMOD RES (TC1 = 1e-6 TC2 = 1.05e-6)
.MODEL RSOURCEMOD RES (TC1 = 2.5e-3 TC2 = 2e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -1.1e-5)
.MODEL RVTEMPMOD RES (TC1 = -1.65e-3 TC2 = 1.45e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -10.0 VOFF= -0.50)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= -10.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 0.50)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.50 VOFF= 0.00)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
-
+
-
6
HUF76129D3, HUF76129D3S




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