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HUF76107P3 Datasheet(数据表) 1 Page - Intersil Corporation

部件型号  HUF76107P3
说明  20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

HUF76107P3 Datasheet(HTML) 1 Page - Intersil Corporation

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207
| Copyright
© Intersil Corporation 1999.
HUF76107P3
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.
Formerly developmental type TA76107.
Features
• Logic Level Gate Drive
• 20A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.052Ω
• Temperature Compensating PSPICE® Model
• Temperature Compensating SABER© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76107P3
TO-220AB
76107P
D
G
S
JEDEC TO-220AB
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
October 1999
File Number
4382.5




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