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SI4410DY 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI4410DY 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET N-Channel MOSFET SI4410DY (KI4410DY) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 30 V VDS=30V, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 25 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 1 3 V VGS=10V, ID=10A (Note.1) 13.5 VGS=4.5V, ID=5A (Note.1) 20 On State Drain Current ID(ON) VGS=5V, VDS=10V (Note.1) 20 A Forward Transconductance gFS VDS=15V, ID=5A (Note.1) 38 S Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 0.5 2.6 Ω Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 10 A 20 34 Total Gate Charge Qgt 37 60 Gate Source Charge Qgs 7 Gate Drain Charge Qgd 7 Turn-On DelayTime td(on) 30 Turn-On Rise Time tr 20 Turn-Off DelayTime td(off) 100 Turn-Off Fall Time tf 80 Body Diode Reverse Recovery Time trr IF= 2.3A, dI/dt= 100A/μs 80 Maximum Body-Diode Continuous Current IS 2.3 A Diode Forward Voltage VSD IS=2.3A,VGS=0V (Note.1) 1.1 V nC ns Zero Gate Voltage Drain Current IDSS uA mΩ VGS=10V, VDS=25V,ID=1A RL=25Ω,RGEN=6Ω RDS(On) Static Drain-Source On-Resistance VGS=10V, VDS=15V, ID=10A Note.1: Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%. ■ Marking 4410 KC**** Marking |
类似零件编号 - SI4410DY |
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类似说明 - SI4410DY |
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