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SI2314EDS-3 数据表(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2314EDS-3 数据表(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd |
3 / 5 page SMD Type www.kexin.com.cn 3 MOSFET N-Channel Enhancement MOSFET SI2314EDS (KI2314EDS) ■ Typical Characterisitics 0.0001 100 10,000 Gate Current vs. Gate-Source Voltage 0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 Gate-Current vs. Gate-Source Voltage VGS – Gate-to-Source Voltage (V) 0.1 1 10 1,000 VGS – Gate-to-Source Voltage (V) 0.01 TJ = 150 C TJ = 25 C 0.001 0.1 1 10 100 0 300 600 900 1200 1500 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 VDS – Drain-to-Source Voltage (V) Coss Ciss ID – Drain Current (A) VGS = 1.8 V On-Resistance vs. Drain Current Capacitance VGS = 2.5 V VGS = 4.5 V Crss 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 0 1 2 3 4 VGS = 4.5 thru 2.0 V TC = 125 C –55 C 1.5 V 25 C s c it s ir e t c a r a h C r e f s n a r T s c it s ir e t c a r a h C t u p t u O VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1.0 V 0.5 V |
类似零件编号 - SI2314EDS-3 |
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类似说明 - SI2314EDS-3 |
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