FDN5630-3 datasheet(2/4 Pages) KEXIN

部件名	FDN5630-3

功能描述	N-Channel MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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MOSFET

N-Channel MOSFET

FDN5630 (KDN5630)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

60

V

Zero Gate Voltage Drain Current

IDSS

VDS=48V, VGS=0V

1

μ

A

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

(Note.1)

1

3

V

VGS=10V, ID=1.7A (Note.1)

100

VGS=10V, ID=1.7A TJ=125℃ (Note.1)

180

VGS=6V, ID=1.6A

(Note.1)

120

On State Drain Current

ID(ON)

VGS=10V, VDS=1.7V

(Note.1)

5

A

Forward Transconductance

gFS

VDS=10V, ID=1.7A

(Note.1)

6

S

Input Capacitance

Ciss

400

Output Capacitance

Coss

102

Reverse Transfer Capacitance

Crss

21

Total Gate Charge

Qg

7

10

Gate Source Charge

Qgs

1.6

Gate Drain Charge

Qgd

1.2

Turn-On DelayTime

td(on)

10

20

Turn-On Rise Time

tr

6

15

Turn-Off DelayTime

td(off)

15

28

Turn-Off Fall Time

tf

7

15

Maximum Body-Diode Continuous Current

IS

0.42

A

Diode Forward Voltage

VSD

IS=0.42A,VGS=0V (Note.1)

1.2

V

pF

nC

ns

mΩ

VGS=10V, VDS=30V, ID=1A,RGEN=6Ω

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=15V, f=1MHz

VGS=10V, VDS=20V, ID=1.7A

Note.1: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%

■

Marking

5630

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