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Die Characteristics

DIE DIMENSIONS:

59 mils x 59 mils x 19 mils

±1 mil

(1500

µm x 1500µm x 483µm ± 25.4µm)

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 4k

Å

Top Metallization:

Type: Metal 1: AICu(2%)/TiW

Thickness: Metal 1: 8k

Å

Type: Metal 2: AICu(2%)

Thickness: Metal 2: 16k

Å

Substrate:

UHF-1, Bonded Wafer, DI

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

Floating (Recommend Connection to V-)

ADDITIONAL INFORMATION:

Transistor Count:

75

Metallization Mask Layout

HS-1410RH

NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS

input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V).

V-

OPTIONAL GND (NOTE)

OUT

+IN

-IN

V+

DISABLE

HS-1410RH