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MTBA6C12J4-0-T3-G 数据表(PDF) 2 Page - Cystech Electonics Corp.

部件名 MTBA6C12J4-0-T3-G
功能描述  N P-Channel Enhancement Mode Power MOSFET
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制造商  CYSTEKEC [Cystech Electonics Corp.]
网页  http://www.cystekec.com
标志 CYSTEKEC - Cystech Electonics Corp.

MTBA6C12J4-0-T3-G 数据表(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C973J4
Issued Date : 2014.06.13
Revised Date : 2014.10.02
Page No. : 2/13
MTBA6C12J4
CYStek Product Specification
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6
Thermal Resistance, Junction-to-ambient, max (Note2)
62.5
Thermal Resistance, Junction-to-ambient, max (Note4)
Rth,j-a
90
°C/W
Note : 1
.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
N-CH Characteristics (Tc=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
120
-
-
V
VGS=0V, ID=250μA
∆BVDSS/∆Tj
-
0.1
-
V/
°C
Reference to 25
°C, ID=250μA
VGS(th)
1.0
1.4
2.5
V
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA
VGS=±20V, VDS=0V
-
-
1
VDS=96V, VGS=0V
IDSS
-
-
10
μA
VDS=96V, VGS=0V, Tj=55
°C
-
176
230
VGS=10V, ID=2A
RDS(ON) *1
-
183
250
VGS=4.5V, ID=1.5A
GFS *1
-
6.3
-
S
VDS=10V, ID=2A
Dynamic
Qg *1
-
8
-
Qgs *1
-
0.9
-
Qgd *1
-
2.3
-
nC
VDS=96V, ID=2A, VGS=10V
td(ON) *1
-
3.4
-
tr
*1
-
16.2
-
td(OFF) *1
-
13.4
-
tf *1
-
25.4
-
ns
VDS=75V, ID=1A, VGS=10V, RG=6Ω
Ciss
-
298
-
Coss
-
29
-
Crss
-
14
-
pF
VDS=25V, VGS=0V, f=1MHz
Source-Drain Diode
IS *1
-
-
2
ISM *2
-
-
10
A
VSD *1
-
0.79
1.3
V
IS=2A, VGS=0V
trr *
-
22
-
ns
Qrr *
-
25
-
nC
IF=2A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.


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