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MTBA6C12J4-0-T3-G 数据表(PDF) 2 Page - Cystech Electonics Corp. |
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MTBA6C12J4-0-T3-G 数据表(HTML) 2 Page - Cystech Electonics Corp. |
2 / 13 page CYStech Electronics Corp. Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 2/13 MTBA6C12J4 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 Thermal Resistance, Junction-to-ambient, max (Note2) 62.5 Thermal Resistance, Junction-to-ambient, max (Note4) Rth,j-a 90 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on the minimum pad size recommended (PCB mount), t≤10s. N-CH Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 120 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.1 - V/ °C Reference to 25 °C, ID=250μA VGS(th) 1.0 1.4 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - 1 VDS=96V, VGS=0V IDSS - - 10 μA VDS=96V, VGS=0V, Tj=55 °C - 176 230 VGS=10V, ID=2A RDS(ON) *1 - 183 250 mΩ VGS=4.5V, ID=1.5A GFS *1 - 6.3 - S VDS=10V, ID=2A Dynamic Qg *1 - 8 - Qgs *1 - 0.9 - Qgd *1 - 2.3 - nC VDS=96V, ID=2A, VGS=10V td(ON) *1 - 3.4 - tr *1 - 16.2 - td(OFF) *1 - 13.4 - tf *1 - 25.4 - ns VDS=75V, ID=1A, VGS=10V, RG=6Ω Ciss - 298 - Coss - 29 - Crss - 14 - pF VDS=25V, VGS=0V, f=1MHz Source-Drain Diode IS *1 - - 2 ISM *2 - - 10 A VSD *1 - 0.79 1.3 V IS=2A, VGS=0V trr * - 22 - ns Qrr * - 25 - nC IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Pulse width limited by maximum junction temperature. |
类似零件编号 - MTBA6C12J4-0-T3-G |
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类似说明 - MTBA6C12J4-0-T3-G |
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