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2SK3018-HF-3 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SK3018-HF-3
功能描述  N-Channel MOSFET
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK3018-HF-3 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
MOSFET
Features
VDS (V) = 30V
ID = 0.1 A
RDS(ON) < 8Ω (VGS = 4V)
RDS(ON) < 13Ω (VGS = 2.5V)
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±
20
Continuous Drain Current
ID
100
Pulsed Drain Current
(Note.1)
IDM
400
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
V
mA
Note.1: PW ≤ 10us, Duty Cycle ≤ 1%
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
uA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
1
uA
Gate Threshold Voltage
VGS(th)
VDS=3V , ID=0.1mA
0.8
1.5
V
VGS=4V, ID=10mA
8
VGS=2.5V, ID=1mA
13
Forward Transconductance
gFS
VDS=3V, ID=10mA
20
mS
Input Capacitance
Ciss
13
Output Capacitance
Coss
9
Reverse Transfer Capacitance
Crss
4
Turn-On DelayTime
td(on)
15
Turn-On Rise Time
tr
35
Turn-Off DelayTime
td(off)
80
Turn-Off Fall Time
tf
80
Static Drain-Source On-Resistance
VGS=0V, VDS=5V, f=1MHz
pF
ns
Ω
VGS=5V, VDS=5V,
ID=10mA,RL=500Ω,RG=10Ω
RDS(On)
Marking
Marking
KN F
Drain
Source
Gate
Gate
Protection
Diode
0.4 +0.1
-0.1
2.9 +0.2
-0.1
0.95 +0.1
-0.1
1.9 +0.1
-0.2
1
2
3
Unit: mm
SOT-23-3
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
Pb−Free Package May be Available.
The G−Suffix Denotes a Pb−Free Lead Finish
N-Channel MOSFET
2SK3018-HF


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