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2SK2211 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK2211 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK2211 ■ Features ● VDS (V) = 30V ● ID = 1A ● RDS(ON) < 0.75Ω (VGS = 4V) ● RDS(ON) < 0.6Ω (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current ID 1 Pulsed Drain Current IDM 2 Power Dissipation PD 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=100μA, VGS=0V 30 Gate to Source voltage VGSS IGS=100μA, VDS=0V ± 20 Zero Gate Voltage Drain Current IDSS VDS=25V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±15V ± 10 uA Gate threshold voltage VGS(th) VDS=5V ID=1mA 0.8 2 V VGS=4V, ID=0.5A 0.75 VGS=10V, ID=0.5A 0.6 Forward Transconductance gFS VDS=10V, ID=0.5A 0.5 S Input Capacitance Ciss 87 Output Capacitance Coss 69 Reverse Transfer Capacitance Crss 23 Turn-On DelayTime td(on) 12 Turn-Off DelayTime td(off) 60 Turn-Off Fall Time tf 160 V pF Static Drain-Source On-Resistance RDS(On) Ω VGS=10V, VDS=10V, ID=0.5A, RL=10Ω VGS=0V, VDS=10V, f=1MHz ns ■ Marking Marking 2M D S G |
类似零件编号 - 2SK2211_15 |
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类似说明 - 2SK2211_15 |
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