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MTBA5C10V8-0-T6-G 数据表(PDF) 6 Page - Cystech Electonics Corp. |
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MTBA5C10V8-0-T6-G 数据表(HTML) 6 Page - Cystech Electonics Corp. |
6 / 13 page CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 6/13 MTBA5C10V8 CYStek Product Specification Typical Characteristics(Cont.) : Q1( N-channel) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 5 10 15 20 Qg, Total Gate Charge(nC) ID=2.3A VDS=80V Maximum Safe Operating Area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=10V, θJA=84°C/W Single Pulse DC 100ms RDSON Limite 100 μs 10ms 1ms 1s Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C VGS=10V RθJA=84°C/W |
类似零件编号 - MTBA5C10V8-0-T6-G |
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类似说明 - MTBA5C10V8-0-T6-G |
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