SI2312DS datasheet(4/4 Pages) KEXIN

部件名	SI2312DS

功能描述	N-Channel Enhancement MOSFET

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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MOSFET

.

N-Channel Enhancement MOSFET

SI2312DS (KI2312DS)

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Typical Characterisitics

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.05

0.10

0.15

0.20

0

2

4

6

8

ID = 5.0 A

20

1

0.01

e

g

a

t

l

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V

e

c

r

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S

-

o

t

-

e

t

a

G

.

s

v

e

c

n

a

t

s

i

s

e

R

-

n

O

e

g

a

t

l

o

V

d

r

a

w

r

o

F

e

d

o

i

D

n

i

a

r

D

-

e

c

r

u

o

S

VSD

V

)

V

(

e

g

a

tl

o

V

n

i

a

r

D

-

o

t-

e

c

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S

-

GS - Gate-to-Source Voltage (V)

0.1

T J = 150 C

T J = 25 C

10

0.01

0

1

10

12

4

6

100

600

0.1

Single Pulse Power

Time (sec)

2

8

-0.4

-0.3

-0.2

-0.1

-0.0

0.1

0.2

-50

-25

0

25

50

75

100

125

150

ID = 250 A

Threshold Voltage

T J

- Temperature ( C)

10

TA = 25 C

10 -3

10 -2

0

6

0

1

10 -1

10 -4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA= 166 C/W

3. TJM - TA = P DM Z thJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

P DM

类似零件编号 - SI2312DS

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI2312DS	58Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. D, 13-Oct-03
Vishay Siliconix	SI2312DS	89Kb / 5P	N-Channel 20 -V (D-S) MOSFET Rev. E, 04-Apr-05
Guangdong Kexin Industr...	SI2312DS-3	1Mb / 4P	N-Channel Enhancement MOSFET
	SI2312DS-HF	1Mb / 4P	N-Channel MOSFET
	SI2312DS-HF-3	1Mb / 4P	N-Channel MOSFET

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类似说明 - SI2312DS

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DONGGUAN YOU FENG WEI E...	2N7002	433Kb / 3P	N-Channel Enhancement MOSFET