HGTG20N50C1D datasheet(2/5 Pages) INTERSIL

部件名	HGTG20N50C1D

功能描述	20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode

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制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

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Speciﬁcations HGTG20N50C1D

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

PARAMETERS

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

MAX

Collector-Emitter Breakdown Voltage

BVCES

IC = 1mA, VGE = 0V

500

-

V

Gate Threshold Voltage

VGE(TH)

VGE = VCE, IC = 1mA

2

4.5

V

Zero Gate Voltage Collector Current

ICES

VCE = 500V

-

250

µA

TC = +125

oC, V

CE = 500V

-

1000

µA

Gate-Emitter Leakage Current

IGES

VGE = ±20V, VCE = 0V

-

100

nA

Collector-Emitter On-Voltage

VCE(SAT)

IC = 20A, VGE = 10V

-

2.5

V

IC = 35A, VGE = 20V

-

3.2

V

Gate-Emitter Plateau Voltage

VGEP

IC = 10A, VCE = 10V

-

6 (Typ)

V

On-State Gate Charge

QG(ON)

IC = 10A, VCE = 10V

-

33 (Typ)

nC

Turn-On Delay Time

tD(ON)I

IC = 20A, VCE(CLP) = 300V, L = 25µH,

TJ = +100

oC, V

GE = 10V, RG = 25Ω

-50

ns

Rise Time

tRI

-50

ns

Turn-Off Delay Time

tD(OFF)I

-

400

ns

Fall Time

tFI

400 (Typ)

500

ns

Turn-Off Energy Loss Per Cycle (Off Switching

Dissipation = WOFF x Frequency)

WOFF

IC = 20A, VCE(CLP) = 300V, L = 25µH,

TJ = +100

oC, V

GE = 10V, RG = 25Ω

1070 (Typ)

µJ

Thermal Resistance Junction-to-Case (IGBT)

RθJC

-

1.25

oC/W

Thermal Resistance of Diode

RθJC

-

1.5

ns

Diode Forward Voltage

VEC

IEC = 20A

-

1.8

V

Diode Reverse Recovery Time

tRR

IEC = 20A, diEC/dt = 100A/µs

-

60

ns

Typical Performance Curves

FIGURE 1. POWER DISSIPATION vs TEMPERATURE

DERATING CURVE

FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD

VOLTAGE vs JUNCTION TEMPERATURE

100

80

60

40

20

0

+25

+50

+75

+100

+125

+150

TC, CASE TEMPERATURE (

oC)

+150

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50

0

+50

+100

+150

TJ, JUNCTION TEMPERATURE (

oC)

VGE = VCE, IC = 1mA

类似零件编号 - HGTG20N50C1D

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类似说明 - HGTG20N50C1D

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