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2SA1413-Z 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1413-Z 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1413-Z ■ Features ● High Voltage:VCEO=-600V ● High Speed : tf ≤ 1us ● Complement to 2SC3632-Z 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -600 Collector - Emitter Voltage VCEO -600 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -1 Collector Current - Pulse (Note.1) ICP -2 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A Note.1: PW ≤ 10ms,Duty Cycle ≤ 5℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -600 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -600 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -7 Collector-base cut-off current ICBO VCB= -600 V , IE=0 -10 Emitter cut-off current IEBO VEB= -7V , IC=0 -10 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-300 mA, IB=-60mA -0.28 -1 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-300 mA, IB=-60mA -0.85 -1.2 hFE(1) VCE= -5V, IC= -100mA 30 58 120 hFE(2) VCE=- 5V, IC= -500mA 5 19 Turn-on time ton 0.1 0.5 Storage time tstg 3.5 5 Turn -off time toff 0.08 0.5 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 42 pF Transition frequency fT VCE= -10V, IE= 50mA 28 MHz DC current gain (Note.1) V V uA VCC=-250V,IC=-0.5A, IB1=-IB2=-0.1A,RL=500Ω us Note.1 : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SA1413-Z-M 2SA1413-Z-L 2SA1413-Z-K Range 30-60 40-80 60-120 Marking **M **L **K |
类似零件编号 - 2SA1413-Z_15 |
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类似说明 - 2SA1413-Z_15 |
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