BCW69-3_15 datasheet(2/2 Pages) KEXIN

部件名	BCW69-3

功能描述	PNP Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

BCW69~BCW70 (KCW69~KCW70)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-50

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-45

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

VCB= -20 V , IE=0

-100

nA

VCB= -20 V , IE=0,TJ=100℃

-10

uA

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

nA

IC=-10 mA, IB=-0.5mA

-80

IC=-50 mA, IB=-2.5mA(Note.1)

-150

IC=-10 mA, IB=-0.5mA

-720

IC=-50 mA, IB=-2.5mA(Note.1)

-810

Base - emitter voltage

VBE

VCE= -5V, IC= -2mA

-600

-750

DC current gain

BCW69

90

BCW70

150

DC current gain

BCW69

120

260

BCW70

215

500

Collector capacitance

Cc

VCB= -10V,IE=ie=0, f=1MHz

4.5

pF

Noise figure

NF

VCE= -5V,IC=-200uA,RS=2KΩ

f=1MHz,B=200Hz

10

dB

Transition frequency

fT

VCE= -5V, IC= -10mA,f=100MHz

100

MHz

Collector-base cut-off current

ICBO

mV

hFE

V

VCE= -5V, IC= -10uA

VCE= -5V, IC= -2mA

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

Note.1: Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

■

Classification of hfe(2)

Type

BCW69

BCW70

Range

120-260

215-500

Marking

H1*

H2*

-300

类似零件编号 - BCW69-3_15

制造商	部件名	数据表	功能描述
NXP Semiconductors	BCW69	42Kb / 8P	PNP general purpose transistors 1999 Apr 19
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KEC(Korea Electronics)	BCW69	156Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
Diotec Semiconductor	BCW69	180Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors

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