BCW33 datasheet(2/2 Pages) KEXIN

部件名	BCW33

功能描述	NPN Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

NPN Transistors

BCW31~BCW33 (KCW31~KCW33)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

32

Collector- emitter breakdown voltage

VCEO

Ic= 2 mA， IB= 0

32

Emitter - base breakdown voltage

VEBO

IE= 100μA， IC= 0

5

VCB= 32 V , IE= 0

100

nA

VCB= 32 V , IE= 0,TJ=100℃

10

uA

Emitter cut-off current

IEBO

VEB= 5V , IC=0

100

nA

IC=10 mA, IB=0.5mA

120

250

IC=50 mA, IB=2.5mA

210

IC=10 mA, IB=0.5mA

750

IC=50 mA, IB=2.5mA

850

Base - emitter voltage

VBE

VCE= 5V, IC= 2mA

550

700

DC current gain

BCW31

90

BCW32

150

BCW33

270

DC current gain

BCW31

110

220

BCW32

200

450

BCW33

420

800

Collector output capacitance

Cc

VCB= 10V,IE=Ie=0,f=10MHz

2.5

pF

Noise figure

NF

IC = 200 u A; VCE = 5 V;

RS = 2kΩ;f = 1 kHz; B = 200 Hz

10

dB

Transition frequency

fT

VCE= 5V, IC= 10mA,f=100MHz

100

MHz

hFE

VCE= 5V, IC= 2mA

V

mV

VCE= 5V, IC= 10uA

Collector-base cut-off current

Collector-emitter saturation voltage

VCE(sat)

Base - emitter saturation voltage

VBE(sat)

ICBO

■

Classification of hfe(2)

Type

BCW31

BCW32

BCW33

Range

110-220

200-450

420-800

Marking

D1*

D2*

D3*

类似零件编号 - BCW33

制造商	部件名	数据表	功能描述
NXP Semiconductors	BCW33	42Kb / 8P	NPN general purpose transistors 1999 Apr 13
Samsung semiconductor	BCW33	27Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	BCW33	85Kb / 5P	NPN General Purpose Amplifier
Diotec Semiconductor	BCW33	180Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
Diotec Semiconductor	BCW33	101Kb / 2P	Surface Mount General Purpose Si-Epi-Planar Transistors

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