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FSJ163D 数据表(PDF) 6 Page - Intersil Corporation

部件名 FSJ163D
功能描述  Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSJ163D 数据表(HTML) 6 Page - Intersil Corporation

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Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
IGSS
VGS = ±20V
±20 (Note 7)
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80% Rated Value
±25 (Note 7)
µA
On Resistance
rDS(ON)
TC = 25
oC at Rated I
D
±20% (Note 8)
Gate Threshold Voltage
VGS(TH)
ID = 1.0mA
±20% (Note 8)
V
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
VGS = 30V, t = 250µsVGS = 30V, t = 250µs
Pind
Optional
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25oC)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150
oC, Time = 48 hours
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 160 hours
MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150
oC, Time = 240 hours
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Safe Operating Area
SOA
VDS = 104V, t = 10ms
4.5
A
Unclamped Inductive Switching
IAS
VGS(PEAK) = 15V, L = 0.1mH
180
A
Thermal Response
∆VSD
tH = 100ms; VH = 25V; IH = 4A
90
mV
Thermal Impedance
∆VSD
tH = 500ms; VH = 25V; IH = 4A
160
mV
FSJ163D, FSJ163R


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