FSJ160D datasheet(2/9 Pages) INTERSIL

部件名	FSJ160D

功能描述	70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

2 / 9 page

3-2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSJ160D, FSJ160R

UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

100

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

V

Continuous Drain Current

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

70

A

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

44

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

200

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

TC = 25

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

192

W

TC = 100

oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

77

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.54

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS

200

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

70

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

200

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

100

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

5.0

V

TC = 25

oC

1.5

-

4.0

V

TC = 125

oC

0.5

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 80V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

oC

-

100

nA

TC = 125

oC

-

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = 12V, ID = 70A

-

1.62

V

Drain to Source On Resistance

rDS(ON)12

ID = 44A,

VGS = 12V

TC = 25

oC

-

0.016

0.022

Ω

TC = 125

oC

-

0.036

Ω

Turn-On Delay Time

td(ON)

VDD = 50V, ID = 70A,

RL = 0.71Ω, VGS 12V,

RGS = 2.35Ω

-

40

ns

Rise Time

tr

-

120

ns

Turn-Off Delay Time

td(OFF)

-

95

ns

Fall Time

tf

-

45

ns

Total Gate Charge

Qg(TOT)

VGS = 0V to 20V

VDD = 50V,

ID = 70A

-

320

nC

Gate Charge at 12V

Qg(12)

VGS = 0V to 12V

-

190

210

nC

Threshold Gate Charge

Qg(TH)

VGS = 0V to 2V

-

11

nC

Gate Charge Source

Qgs

-35

49

nC

Gate Charge Drain

Qgd

-

110

120

nC

Plateau Voltage

V(PLATEAU) ID = 70A, VDS = 15V

-

8

-

V

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

-

4500

-

pF

Output Capacitance

COSS

-

1530

-

pF

Reverse Transfer Capacitance

CRSS

-

570

-

pF

Thermal Resistance Junction to Case

R

θJC

-

0.65

oC/W

Thermal Resistance Junction to Ambient

R

θJA

--

40

oC/W

FSJ160D, FSJ160R

类似零件编号 - FSJ160D

制造商	部件名	数据表	功能描述
Intersil Corporation	FSJ163D	56Kb / 8P	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1999
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	FSJ163R	56Kb / 8P	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1999
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FSJ160D 数据表(PDF) 2 Page - Intersil Corporation

FSJ160D 数据表(HTML) 2 Page - Intersil Corporation

类似零件编号 - FSJ160D

类似说明 - FSJ160D

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链接网址

FSJ160D 数据表(PDF) 2 Page - Intersil Corporation

FSJ160D 数据表(HTML) 2 Page - Intersil Corporation

类似零件编号 - FSJ160D

类似说明 - FSJ160D

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载