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FSJ055D Datasheet(数据表) 3 Page - Intersil Corporation

部件型号  FSJ055D
说明  70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
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制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
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FSJ055D Datasheet(HTML) 3 Page - Intersil Corporation

   
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3
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 70A
0.6
-
1.8
V
Reverse Recovery Time
trr
ISD = 70A, dISD/dt = 100A/µs
-
-
250
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
60
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 48V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 70A
-
0.88
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 54A
-
0.012
NOTES:
1. Pulse test, 300
µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED VGS
BIAS (V)
(NOTE 6)
MAXIMUM
VDS BIAS (V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
µ)
Single Event Effects Safe
Operating Area
SEESOA
Ni
26
43
-20
60
Br
37
36
-10
60
Br
37
36
-15
48
Br
37
36
-20
36
I60
31
0
60
I60
31
-5
48
I
60
31
-10
36
I
60
31
-15
24
I
60
31
-20
12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
FSJ055D, FSJ055R




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