IRF7105QPbF

05/20/14

Description

N-Ch P-Ch

25V

-25V

3.5A

-2.3A

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

P-CHANNEL MOSFET

N-CHANNEL MOSFET

www.irf.com

1

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Advanced Process Technology

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Ultra Low On-Resistance

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Dual N and P Channel MOSFET

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Surface Mount

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Available in Tape & Reel

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150°C Operating Temperature

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Lead-Free

lastest processing techniques to achieve extremely low on-resistance

per silicon area. Additional features of these HEXFET Power

MOSFET's are a 150°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating. These

benefits combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal characteristics

and dual MOSFET die capability making it ideal in a variety of power

applications. This dual, surface mount SO-8 can dramatically reduce

board space and is also available

in Tape & Reel.

Max.

N-Channel

P-Channel

3.5

-2.3

2.8

-1.8

Pulsed Drain Current 

14

-10

Power Dissipation

2.0

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt ‚

3.0

-3.0

V/nS

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Units

A

Absolute Maximum Ratings

W

Parameter

Min.

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

–––

62.5

°C/W

Thermal Resistance Ratings

SO-8

END OF LIFE

PD - 96102B

Form

Quantity

IRF7105QTRPbF

SO-8

Tape and Reel

4000

EOL 527

IRF7105QPbF

SO-8

Tube

95

EOL 529

IRF7105QPbF

Please search the EOL part number on IR’s

website for guidance

Base part number

Package

Type

Standard Pack

EOL Notice

Orderable part number

Replacement Part Number