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PSMN4R0-25YLC 数据表(PDF) 3 Page - NXP Semiconductors

部件名 PSMN4R0-25YLC
功能描述  NextPower MOSFETs
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PSMN4R0-25YLC 数据表(HTML) 3 Page - NXP Semiconductors

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NextPower MOSFETs - Visit us at www.nxp.com/mosfets
NextPower 25 V & 30 V MOSFETs
in LFPAK (Power-SO8)
Benefits of Superjunction technology
Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story.
The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing
the six most important MOSFET parameters required for high-performance & high reliability switching applications. The
outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph
represents a weakness.
} Low R
DS(on) gives low I
2
R losses and superior performance
when used in a SYNC FET or power OR-ing application
} Low Q
oss gives reduced losses between the drain
& source terminals since the energy stored in
the output capacitance (C
oss) is wasted whenever
the voltage changes across the output terminals
} SOA performance provides tolerance to overload & fault
conditions. The graph shows the maximum allowable
current for a 1 mS pulse at V
DS=10 V
} Low Miller charge (Q
GD) gives reduced switching losses
between the MOSFET’s drain & source terminals when
the MOSFET turns ON or turns OFF
} Low gate charge (Q
G) gives reduced losses in the gate
drive circuit since less energy is required to turn the
MOSFET ON & OFF
} Superior junction temperature rating, T
j(max), is proof that
LFPAK is the most rugged Power-SO8 package available.
LFPAK is the best choice for demanding environments
and where high reliability is required
Comparison of NextPower technology with key competitor types
RDS(on)max
@ Vgs = 4.5 V
T
j(max)
NXP
Competitor A
Competitor B
Combined Q
G &
Q
GD FOM
SOA rating
Q
oss FOM


类似零件编号 - PSMN4R0-25YLC

制造商部件名数据表功能描述
logo
NXP Semiconductors
PSMN4R0-25YLC PHILIPS-PSMN4R0-25YLC Datasheet
425Kb / 15P
   N-channel 25 V 4.5 m廓 logic level MOSFET in LFPAK
Rev. 01-2 December 2010
PSMN4R0-25YLC PHILIPS-PSMN4R0-25YLC Datasheet
1Mb / 8P
   NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
May 2011
logo
Nexperia B.V. All right...
PSMN4R0-25YLC NEXPERIA-PSMN4R0-25YLC Datasheet
1,007Kb / 15P
   N-channel 25 V 4.5 mΩ logic level MOSFET in LFPAK
Rev. 01 - 2 December 2010
logo
NXP Semiconductors
PSMN4R0-25YLC PHILIPS-PSMN4R0-25YLC_15 Datasheet
425Kb / 15P
   N-channel 25 V 4.5 m logic level MOSFET in LFPAK
Rev. 01-2 December 2010
More results

类似说明 - PSMN4R0-25YLC

制造商部件名数据表功能描述
logo
NXP Semiconductors
PSMN3R8-30LL PHILIPS-PSMN3R8-30LL Datasheet
1Mb / 8P
   NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
May 2011
PSMN1R5-40PS PHILIPS-PSMN1R5-40PS Datasheet
1Mb / 8P
   NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)
May 2011
logo
Hubbell Incorporated.
PREMISE_C5ELPRR HUBBELL-PREMISE_C5ELPRR Datasheet
495Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
PREMISE_C5ELPPGY HUBBELL-PREMISE_C5ELPPGY Datasheet
493Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
PREMISE_C5ELPPGN HUBBELL-PREMISE_C5ELPPGN Datasheet
495Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
PREMISE_C5ELPPBK HUBBELL-PREMISE_C5ELPPBK Datasheet
486Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
PREMISE_C5ELPRW HUBBELL-PREMISE_C5ELPRW Datasheet
597Kb / 1P
   NextPower Catrgory 5E 4PPoE
PREMISE_C5ELPRP HUBBELL-PREMISE_C5ELPRP Datasheet
495Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
PREMISE_C5ELPPV HUBBELL-PREMISE_C5ELPPV Datasheet
402Kb / 1P
   NextPower Catrgory 5E 4PPoE
PREMISE_C5ELPPLG HUBBELL-PREMISE_C5ELPPLG Datasheet
495Kb / 1P
   NEXTPOWER CATEGORY 5E 4PPoE
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