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PSMN4R0-25YLC 数据表(PDF) 2 Page - NXP Semiconductors |
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PSMN4R0-25YLC 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page  2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low R DS(on) device and accept the higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise… Many competitors focus only on optimising R DS(on) and Qg. As Qg gets lower then losses due to Qoss and Qgd become more significant. NextPower uses Superjunction technology to provide the optimum balance between low R DS(on), low Q oss, low Qg(tot) and Qgd to give optimum switching performance. NextPower delivers superior SOA performance, and low Q oss reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest RDS(on) with sub 1 mΩ types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. Key benefits } High efficiency in power switching applications } Industry’s lowest R DS(on) Power-SO8 - Less than 1 mΩ at 25 V and 30 V } Low Q oss for reduced output losses between DRAIN & SOURCE } Low Q gd for reduced switching losses and high frequency switching } 20 V rated GATE provides better tolerance to voltage transients than lateral MOSFET types } Superior ‘Safe Operating Area’ performance compared to other Trench MOSFET vendors } Optimised for 4.5 V gate drive voltage } Optimum switching performance under light & heavy load conditions } LFPAK package for compatibility with other vendor Power-SO8 types } Eliminates costly X-ray inspection – LFPAK solder joints can be optically inspected Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing |
类似零件编号 - PSMN4R0-25YLC |
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类似说明 - PSMN4R0-25YLC |
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