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DA28F016SV-065 数据表(PDF) 52 Page - Intel Corporation |
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DA28F016SV-065 数据表(HTML) 52 Page - Intel Corporation |
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52 / 63 page  28F016SV FlashFile™ MEMORY E 52 5.9 AC Characteristics for CE#—Controlled Command Write Operations(1) (Continued) VCC = 5V ± 0.5V, 5V ± 0.25V, TA = 0° to +70°C, –40°C to +85°C Temp Commercial Extended Speed –65 –70 –80 Sym Parameter VCC 5V ± 5% 5V ± 10% 5V ± 10% Unit Load 30 pF 50 pF 50 pF Notes Min Typ Max Min Typ Max Min Typ Max tPHEL RP# High Recovery to CE# Going Low 3,7 0.300 1(9) 0.300(10) 1 µs tEHGL Write Recovery before Read 55 60 65 ns tQVVL1,2 VPP Hold from Valid Status Register (CSR, GSR, BSR) Data at RY/BY# High 30 0 0 µs tEHQV1 Duration of Program Operation 3,4,5,11 4.5 6 TBD 4.5 6 TBD 4.5 6 TBD µs tEHQV2 Duration of Block Erase Operation 3,4 0.3 0.6 10 0.3 0.6 10 0.3 0.6 10 sec NOTES: 1. Read timings during program and erase are the same as for normal read. 2. Refer to command definition tables for valid address and data values. 3. Sampled, not 100% tested. Guaranteed by design. 4. Program/erase durations are measured to valid Status Data. VPP = 12V ± 0.6V. 5. Word/byte program operations are typically performed with 1 Programming Pulse. 6. Address and Data are latched on the rising edge of CE# for all command write operations. 7. CEX# is defined as the latter of CE0# or CE1# going low, or the first of CE0# or CE1# going high. 8. Device speeds are defined as: 65/70 ns at VCC = 5V equivalent to 75 ns at VCC = 3.3V 70/80 ns at VCC = 5V equivalent to 120 ns at VCC = 3.3V 9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit. 10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit. 11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales office for more information. |
类似零件编号 - DA28F016SV-065 |
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类似说明 - DA28F016SV-065 |
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