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DA28F016XS-20 数据表(PDF) 44 Page - Intel Corporation |
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DA28F016XS-20 数据表(HTML) 44 Page - Intel Corporation |
44 / 54 page 28F016XS FLASH MEMORY E 44 5.9 AC Characteristics for CEX#—Controlled Write Operations(1) VCC = 3.3V ± 5%, TA = 0°C to +70°C Versions 28F016XS-20 28F016XS-25 Symbol Parameter Notes Min Typ Max Min Typ Max Unit tAVAV Write Cycle Time 80 75 ns tVPEH1,2 VPP Setup to CEX# Going High 3,7 100 100 ns tPHWL RP# Setup to WE# Going Low 3 480 480 ns tWLEL WE# Setup to CEX# Going Low 3,7 0 0 ns tAVEH Address Setup to CEX# Going High 2,6,7 60 60 ns tDVEH Data Setup to CEX# Going High 2,6,7 60 60 ns tELEH CEX# Pulse Width 7 65 60 ns tEHDX Data Hold from CEX# High 2,7 10 10 ns tEHAX Address Hold from CEX# High 2,7 10 10 ns tEHWH WE hold from CEX# High 3,7 5 5 ns tEHEL CEX# Pulse Width High 7 15 15 ns tGHEL Read Recovery before Write 30 0 ns tEHRL CEX# High to RY/BY# Going Low 3,7 100 100 ns tRHPL RP# Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BY# High 30 0 ns tPHEL RP# High Recovery to CEX# Going Low 3,7 480 480 ns tEHCH Write Recovery before Read 20 20 ns tQVVL1,2 VPP Hold from Valid Status Register (CSR, GSR, BSR) Data and RY/BY# High 30 0 µs tEHQV1 Duration of Program Operation 3,4,5,8 5 9 TBD 5 9 TBD µs tEHQV2 Duration of Block Erase Operation 3,4 0.6 1.6 20 0.6 1.6 20 sec |
类似零件编号 - DA28F016XS-20 |
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类似说明 - DA28F016XS-20 |
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