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DA28F016SA-070 数据表(PDF) 44 Page - Intel Corporation

部件名 DA28F016SA-070
功能描述  28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
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制造商  INTEL [Intel Corporation]
网页  http://www.intel.com
标志 INTEL - Intel Corporation

DA28F016SA-070 数据表(HTML) 44 Page - Intel Corporation

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28F016SA
E
44
5.9
AC Characteristics for CE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1) (Continued)
VCC = 5.0 to 10%, 5.0V ± 5%, TA = 0
°C to +70°C, –40°C to +85°C
Temp
Commercial
Commercial
Comm/Ext
Versions
VCC ± 5%
28F016SA-070
Unit
VCC ± 10%
28F016SA-080
28F016SA-100
Sym
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
tRHPL
RP# Hold from
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
30
0
0
ns
tPHEL
RP# High
Recovery to
CE# Going Low
11
1
µs
tEHGL
Write Recovery
before Read
60
65
80
µs
tQVVL
VPP Hold from
Valid Status
Register (CSR,
GSR, BSR)
Data and
RY/BY# High
00
0
µs
tEHQV1 Duration of
Word/Byte
Program
Operation
4,5
4.5
6
Note
7
4.5
6
Note
7
4.5
6
Note
7
µs
tEHQV2 Duration of
Block Erase
Operation
4
0.3
10
0.3
10
0.3
10
sec
NOTES:
CE# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.
1.
Read timings during data program and block erase are the same as for normal read.
2.
Refer to command definition tables for valid address and data values.
3.
Sampled, but not 100% tested.
4.
Data program/block erase durations are measured to valid Status Register data.
5.
Word/byte program operations are typically performed with 1 programming pulse.
6.
Address and data are latched on the rising edge of CE# for all command write operations.
7.
This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel sales office
for more information.


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