BF1205C_2015 datasheet(10/22 Pages) JMNIC

部件名	BF1205C_2015

功能描述	Dual N-channel dual gate MOS-FET

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制造商	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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10 / 22 page

BF1205C_2

Product data sheet

Rev. 02 — 15 August 2006

10 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

8.1.2 Scattering parameters for ampliﬁer a

8.1.3 Noise data for ampliﬁer a

VDS(a) =5V; VG2-S(a) =4V; VDS(b) =VG1-S(b) =0V; ID(a) =19mA.

Fig 16. Output admittance as a function of frequency; typical values.

001aaa567

bos, gos

(mS)

1

10

10−2

10−1

f (MHz)

10

103

102

bos

gos

Table 9.

Scattering parameters for ampliﬁer a

VDS(a) =5V; VG2-S =4V; ID(a) = 19 mA; VDS(b) =0V; VG-1S(b) =0V; Tamb =25 °C.

f

(MHz)

S11

S21

S12

S22

Magnitude

ratio

Angle

(deg)

Magnitude

ratio

Angle

(deg)

Magnitude

ratio

Angle

(deg)

Magnitude

ratio

Angle

(deg)

50

0.992

−3.91

3.07

175.56 0.0007

83.61

0.992

−1.47

100

0.990

−7.76

3.06

171.18 0.0017

83.19

0.992

−2.93

200

0.982

−15.42 3.04

162.42 0.0026

78.19

0.990

−5.84

300

0.971

−22.99 3.01

153.79 0.0037

73.75

0.988

−8.71

400

0.956

−30.52 2.96

145.22 0.0047

69.82

0.985

−11.59

500

0.938

−37.83 2.90

136.78 0.0055

66.12

0.982

−14.48

600

0.917

−45.14 2.83

128.46 0.0061

62.11

0.979

−17.31

700

0.893

−52.31 2.76

120.20 0.0065

58.86

0.975

−20.14

800

0.867

−59.47 2.69

111.98 0.0068

58.28

0.972

−22.98

900

0.838

−66.23 2.60

103.90 0.0067

50.64

0.968

−25.85

1000

0.807

−73.10 2.52

95.875 0.0065

47.28

0.966

−28.74

Table 10.

Noise data for ampliﬁer a

VDS(a) =5V; VG2-S =4V; ID(a) = 19 mA; VDS(b) =0V; VG-1S(b) =0V; Tamb =25 °C.

f

(MHz)

Fmin

(dB)

Γ

opt

rn

(

Ω)

ratio

(deg)

400

1.3

0.718

16.06

0.683

800

1.4

0.677

37.59

0.681

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