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BF1202_2015 数据表(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1202_2015 数据表(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 16 page 2000 Mar 29 4 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. RG1 connects G1 to VGG =5V. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise specified. Note 1. Measured in Fig.21 test circuit. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 µA10 − V V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S =10mA 6 − V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10mA 6 − V V(F)S-G1 forward source-gate 1 voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S =4V; VDS =5V; ID = 100 µA 0.3 1.0 V VG2-S(th) gate 2-source threshold voltage VG1-S =5V; VDS =5V; ID = 100 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =5V; RG1 = 120 kΩ; note 1 816 mA IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =4V − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C 253040mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 1.7 2.2 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 1 − pF Coss output capacitance f = 1 MHz − 0.85 − pF Crss reverse transfer capacitance f = 1 MHz − 15 30 fF F noise figure f = 10.7 MHz; GS = 20 mS; BS =0 − 911 dB f = 400 MHz; YS =YS opt − 0.9 1.5 dB f = 800 MHz; YS =YS opt − 1.1 1.8 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS =BS opt; GL = 0.5 mS; BL =BL opt − 34.5 − dB f = 400 MHz; GS = 2 mS; BS =BS opt; GL = 1 mS; BL =BL opt − 30.5 − dB f = 800 MHz; GS = 3.3 mS; BS =BS opt; GL = 1 mS; BL =BL opt − 26.5 − dB Xmod cross-modulation input level for k = 1%; fw = 50 MHz; funw = 60 MHz; note 1 at 0 dB AGC 90 −− dB µV at 10 dB AGC − 92 − dB µV at 40 dB AGC 100 105 − dB µV |
类似零件编号 - BF1202_2015 |
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类似说明 - BF1202_2015 |
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