数据搜索系统,热门电子元器件搜索 |
|
BF1102_2015 数据表(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
BF1102_2015 数据表(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 16 page 2000 Apr 11 5 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R ALL GRAPHS FOR ONE MOS-FET handbook, halfpage 0 30 20 10 0 0.8 0.4 2.4 2.0 1.6 1.2 MGS360 VG1-S (V) 2.5 V 2 V 1.5 V 1 V 3.5 V 3 V VG2-S = 4 V ID (mA) Fig.3 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 010 30 10 0 20 MGS361 24 6 8 VDS (V) ID (mA) 1.4 V 1.3 V 1.2 V 1.1 V 1 V VG1-S = 1.5 V Fig.4 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 160 80 120 40 0 0.5 2.5 MGS362 1 1.5 2 IG1 ( µA) VG1-S (V) 2.5 V 2 V 3.5 V 3 V VG2-S = 4 V Fig.5 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 010 30 50 0 40 MGS363 20 30 20 10 ID (mA) |yfs| (mS) 3.5 V 3 V VG2-S = 4 V 2.5 V 2 V Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS =5V. Tj =25 °C. |
类似零件编号 - BF1102_2015 |
|
类似说明 - BF1102_2015 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |