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BF245A_2015 数据表(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF245A_2015 数据表(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 11 page 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm. THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −±30 V VGDO gate-drain voltage open source −−30 V VGSO gate-source voltage open drain −−30 V ID drain current − 25 mA IG gate current − 10 mA Ptot total power dissipation up to Tamb =75 °C; − 300 mW up to Tamb =90 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 250 K/W thermal resistance from junction to ambient 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −30 − V VGSoff gate-source cut-off voltage ID = 10 nA; VDS =15V −0.25 −8.0 V VGS gate-source voltage ID = 200 µA; VDS =15V BF245A −0.4 −2.2 V BF245B −1.6 −3.8 V BF245C −3.2 −7.5 V IDSS drain current VDS =15V; VGS = 0; note 1 BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA IGSS gate cut-off current VGS = −20 V; VDS =0 −−5nA VGS = −20 V; VDS = 0; Tj = 125 °C −−0.5 µA |
类似零件编号 - BF245A_2015 |
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类似说明 - BF245A_2015 |
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