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BF245A_2015 数据表(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

部件名 BF245A_2015
功能描述  N-channel silicon field-effect transistors
Download  11 Pages
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制造商  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
网页  http://www.jmnic.com
标志 JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF245A_2015 数据表(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1996 Jul 30
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm
× 10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp = 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−±30
V
VGDO
gate-drain voltage
open source
−−30
V
VGSO
gate-source voltage
open drain
−−30
V
ID
drain current
25
mA
IG
gate current
10
mA
Ptot
total power dissipation
up to Tamb =75 °C;
300
mW
up to Tamb =90 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
250
K/W
thermal resistance from junction to ambient
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
IG = −1 µA; VDS =0
−30
V
VGSoff
gate-source cut-off voltage
ID = 10 nA; VDS =15V
−0.25
−8.0
V
VGS
gate-source voltage
ID = 200 µA; VDS =15V
BF245A
−0.4
−2.2
V
BF245B
−1.6
−3.8
V
BF245C
−3.2
−7.5
V
IDSS
drain current
VDS =15V; VGS = 0; note 1
BF245A
2
6.5
mA
BF245B
6
15
mA
BF245C
12
25
mA
IGSS
gate cut-off current
VGS = −20 V; VDS =0
−−5nA
VGS = −20 V; VDS = 0; Tj = 125 °C
−−0.5
µA


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