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1N1189 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N1189 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 400 V - 600 V IF = 35 A Features • High Surge Capability DO-5 Package • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V Silicon Standard Recovery Diode Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 400 600 420 600 500 400 Conditions 1N1188 (R) 1N1189 (R) 1N1190 (R) 500 350 280 1N1188 thru 1N1190R 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W 0.25 35 35 35 595 595 595 600 1.2 1.2 -55 to 150 10 500 400 10 1N1190 (R) 1.2 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 1N1188 (R) 1N1189 (R) 0.25 0.25 VR = 50 V, Tj = 140 °C 10 10 A V TC = 25 °C, tp = 8.3 ms TC ≤ 140 °C Conditions VR = 50 V, Tj = 25 °C IF = 35 A, Tj = 25 °C Reverse current IR VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1 |
类似零件编号 - 1N1189 |
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类似说明 - 1N1189 |
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