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74HCT541DB Datasheet(数据表) 9 Page - NXP Semiconductors

部件型号  74HCT541DB
说明  Octal buffer/line driver 3-state
下载  19 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 

 9 page
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74HC_HCT541
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 15 April 2014
9 of 19
NXP Semiconductors
74HC541; 74HTC541
Octal buffer/line driver; 3-state
[1]
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2]
tt is the same as tTHL and tTLH.
[3]
CPD is used to determine the dynamic power dissipation (PD in W):
PD =CPD  VCC2  fi  N+  (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
 (C
L  VCC
2
 f
o) = sum of outputs.
tt
transition time
see Figure 6
[2]
VCC = 2.0 V
-
14
60
75
90
ns
VCC = 4.5 V
-
5
12
15
18
ns
VCC = 6.0 V
-
4
10
13
15
ns
CPD
power dissipation
capacitance
per package;
VI =GND to VCC
[3]
-37
-
-
-
pF
74HCT541
tpd
propagation delay
An to Yn; see Figure 6
[1]
VCC = 4.5 V
-
15
28
35
42
ns
VCC = 5.0 V; CL =15pF
-
12
-
-
-
ns
ten
enable time
OEn to Yn; see Figure 7
[1]
VCC = 4.5 V
-
21
35
44
53
ns
tdis
disable time
OEn to Yn; see Figure 7
[1]
VCC = 4.5 V
-
21
35
44
53
ns
tt
transition time
VCC = 4.5 V; see Figure 6
[2]
-
5
12
15
18
ns
CPD
power dissipation
capacitance
per package;
VI =GND to VCC  1.5 V
[3]
-39
-
-
-
pF
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for test circuit, see Figure 8.
Symbol Parameter
Conditions
Tamb = 25 C
Tamb = 40 C to +125 C
Unit
Min
Typ
Max
Max (85
C) Max (125 C)




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