2SC4278_2015 datasheet(1/1 Pages) JMNIC

部件名	2SC4278_2015

功能描述	Silicon NPN Transistors

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制造商	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

网页	http://www.jmnic.com

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Power Transistors

www.jmnic.com

2SC4278

Silicon NPN Transistors

B

C

E

Features

With TO-247 package

Complement to type 2SA1633

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

150

V

VCEO

Collector to emitter voltage

150

V

VCER

Emitter to base voltage

VEB

Emitter to base voltage

5

V

IB

Base Current

IC

Collector current-Continuous

10

A

PD

Total Power Dissipation@TC=25

Derate above 25

100

W

W/

Tj

Junction temperature

150

Tstg

Storage temperature

-65~150

TO-247

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=30mA; IB=0

150

V

VCBO

Collector-Base Voltage

IC=1mA; IE=0

150

V

ICEO

Collector Cutoff Current

VCE=150V; IB=0

500

uA

ICBO

Collector Cutoff Current

VCB=150V; IE=0

100

uA

IEBO

Emitter Cutoff Current

VEBO

Emitter Cutoff Current

IE=5mA; IC=0

5

V

VCE(sat-1)

Collector-emitter saturation voltages

IC=5A; IB=0.5A

2.0

V

VCE(sat-2)

Collector-emitter saturation voltages

VCE(sat-3)

Collector-emitter saturation voltages

VCE(sat-4)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=1A; VCE=5V

60

320

hFE-2

Forward current transfer ratio

VBE(sat)

Base-emitter Saturation voltages

fT

Current Gain-Bandwidth Product

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